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Chee-Keong Tan

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Abul KhondkerAssistant Professor
143 CAMP
Clarkson University
PO Box 5720,
Potsdam, NY 13699-5720

Phone: 315-268-6465
FAX: 315-268-7600
E-mail: ctan@clarkson.edu
Website

Educational Background

B.Eng. Electrical Engineering, University of Sheffield, United Kingdom

Ph.D. Electrical Engineering, Lehigh University, United States

Teaching Interests

Physics of semiconductor material and devices, applied quantum mechanics for engineers, introduction to solid state physics

Research Interests

Dr. Tan’s research interests are related to the novel materials and nanostructure design for future devices. Specifically, his research areas are related to novel design of III-Nitride semiconductor materials and nanostructures for solid state lighting technologies. His research work cover mainly the aspect of computational design in III-Nitride semiconductors and nanostructures by using advanced computational techniques. His research interests include the development of new dilute-anion III-Nitride materials, novel nanostructure engineering, the studies of efficiency droop of light emitting diodes in III-Nitride material, fundamental electronic structures in III-Nitride material and solar cell.

Refereed Journal Publications

  1. C. K. Tan, J. Zhang, X. H. Li, G. Y. Liu, B. O. Tayo, and N. Tansu, “First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters”, IEEE / OSA Journal of Display Technology, vol. 9, no. 4, pp. 272-279, April 2013. DOI: 10.1109/JDT.2013.2248342
  2. G. Y. Liu, J. Zhang, C. K. Tan, and N. Tansu, “Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum Wells Light-Emitting Diodes”, IEEE Photonics Journal, vol. 5, no. 2, Art. 2201011, April 2013. DOI: 10.1109/JPHOT.2013.2255028
  3. C. K. Tan, and N. Tansu, “First-Principle Natural Band Alignment of GaN / Dilute-As GaNAs Alloy,” AIP Advances, vol. 5, no. 1, p. 017129, January 2015. DOI: 10.1063/1.4906569
  4. (Invited Paper) C. K. Tan, and N. Tansu, “Nanostructured Lasers: Electrons and Holes Get Closer,” Nature Nanotechnology, vol. 10, no. 2, pp. 107-109, February 2015. DOI: 10.1038/nnano.2014.333
  5. C. K. Tan, and N. Tansu, “Auger Recombination Rates in Dilute-As GaNAs Semiconductor”, AIP Advances, vol. 5, no. 5, p. 057135, May 2015. DOI: 10.1063/1.4921394
  6. P. F. Zhu, C. K. Tan, W. Sun, and N. Tansu, “Aspect Ratio Engineering of Microlens Arrays in Thin-Film Flip-Chip Light-Emitting Diodes”, Applied Optics, vol. 54, no. 34, pp. 10299-10303, November 2015. DOI: 10.1364/AO.54.010299
  7. C. K. Tan, D. Borovac, W. Sun and N. Tansu, “InGaN / Dilute-As GaNAs Interface Quantum Well for Red Emitters”, Scientific Reports [Nature Publishing Group], vol. 6, Art. 19271, January 2016. DOI: 10.1038/srep19271.
  8. C. K. Tan, D. Borovac, W. Sun and N. Tansu, “Dilute-As AlNAs Alloy for Deep Ultraviolet Emitters”, Scientific Reports [Nature Publishing Group], vol. 6, Art. 22215, February 2016. DOI: 10.1038/srep22215
  9. C. K. Tan, W. Sun, D. Borovac and N. Tansu, “Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters”, Scientific Reports [Nature Publishing Group], vol. 6, Art. 22983, March 2016. DOI: 10.1038/srep22983